sep. 20 15 revision 0.0 magnachip semiconductor ltd . 1 mbq40t65fesc 650v field stop igbt e c g maximum rating parameter symbol rating unit collector - e mitter v oltage v ce 65 0 v dc collector current, limited by t vj max t c =25 c i c 80 a t c =100 c 40 a pulsed c ollector cu rren t, t p l imited by t j vj max i c puls 160 a turn off safe operating area v ce 600v , t vj 175 c - 160 a diode f orward c urrent limited by t vj max t c =25 c i f 40 a t c =100 c 20 diode pulsed c urrent , t p limited by t vj max i f puls 160 a gate - e mitter v oltage v g e 2 0 v p ower d issipation t c =25 c p d 3 41 w t c =100 c 1 70 w short c ircuit w ithstand t ime v c c 4 00v, v ge = 15v, t vj = 1 50 c allowed number of short circuits < 1000 time between short circuits 1.0s tsc 5 s operating junction t emperature r ange t vj - 40 ~1 75 c storage temperature range t stg - 55~150 c soldering temperature w ave soldering 1.6 mm (0.063 in.) from case for 10s 260 c mounting torque, m3 screw maximum of mounting processes: 3 m 0.6 nm thermal characteristic parameter symbol rating unit thermal r esistance j unction - to - a mbient r ja 4 0 c /w thermal r esistance j unction - to - c ase for igbt r jc 0. 4 4 thermal r esistance j unction - to - c ase for diode r jc 1.2 mbq40t65fesc 650v field stop igbt features ? high speed switching & low power loss ? v ce(sat) = 1.9 5v @ i c = 40a ? e off = 0.3 mj @ t c = 25 c ? high input impedance ? t rr = 80ns ( typ.) @ di f /dt = 100 0a/ s ? maximum junction temperature 175 c applications ? pfc ? ups ? pv inverter general description th is igbt is produced using advanced magnachips field stop trench igbt technology, which provides high switching series and excellent quality. this device is for pfc, ups & inverter applications. to - 2 47 ? welder ? ih cooker
sep. 20 15 revision 0.0 magnachip semiconductor ltd . 2 mbq40t65fesc 650v field stop igbt ordering information p art number marking temp. range package packing rohs status m bq40t 65 fe s c th 40t65 fe s c - 55~1 75 c to - 247 tube halogen free electrical characteristic ( t vj = 25c unless otherwise specified ) parameter symbol condition s min typ max unit static characteristic collector - e mitter b reakdown v oltage bv ces i c = 2 m a, v g e = 0v 65 0 - - v collector - emitter saturation voltage v ce(sat) i c = 40a, v ge = 15v t vj = 25c 1.95 2.4 v t vj = 175c 2.3 diode forward voltage v f v ge = 0v, i f = 20a t vj = 25c 1. 5 1.9 v t vj = 175c 1. 4 gate - emitter threshold voltage v ge(th) v ce = v ge , i c = 0.5 m a 4.0 5.0 6.0 v zero gate voltage collector current i ces v ce = 650v, v ge = 0v, t vj = 25c - - 40 a gate - emitter leakage current i ges v ge = 20v, v ce = 0v - - 100 na dynamic characteristic total g ate c harge q g v ce = 52 0v, i c = 40 a, v ge = 1 5 v - 2 18 nc gate - emitter c harge q ge - 3 3 gate - collector c harge q g c - 1 36 input c apacitance c i e s v ce = 25 v, v ge = 0v, f = 1 mhz - 3 342 - pf reverse t ransfer c apacitance c r e s - 1 2 0 - output c apacitance c o e s - 198 - internal emitter inductance measured 5mm (0.197 in.) from case l e - 13.0 - nh short circuit collector current m ax. 1000 short circuits t ime between short circuits: 1.0s i c( sc ) v g e = 1 5 v, v cc = 40 0v, t sc 5 s, t vj = 150 c - 1 20 - a switching characteristic turn - o n d elay t ime t d(on) v g e = 15v, v cc = 400v, i c = 40a, r g = 7.9 , inductive load, t vj = 25 c - 50 - n s rise t ime t r - 49 - turn - o ff d elay t ime t d(off) - 31 8 - fall t ime t f - 3 6 - turn - on switching energy e on - 0.6 8 - mj turn - off switching energy e off - 0. 30 - total switching energy e ts - 0.9 8 - turn - o n d elay t ime t d(on) v g e = 15v, v cc = 400v, i c = 4 0a, r g = 7.9 , inductive load, t vj = 175 c - 4 5 - n s rise t ime t r - 5 7 - turn - o ff d elay t ime t d(off) - 3 66 - fall t ime t f - 47 - turn - on switching energy e on - 0. 95 - mj turn - off switching energy e off - 0.3 6 - total switching energy e ts - 1.31 - reverse recovery time t rr i f = 20a, di f /dt = 10 00a/ s, t vj = 25 c - 80 - n s reverse recovery current i rr - 20 - a reverse recovery charge q rr - 0.8 - c reverse recovery time t rr i f = 2 0a, di f /dt = 10 00a/ s, t vj = 17 5 c - 92 - n s reverse recovery current i rr - 28 - a reverse recovery charge q rr - 1.3 - nc
sep. 20 15 revision 0.0 magnachip semiconductor ltd . 3 mbq40t65fesc 650v field stop igbt
sep. 20 15 revision 0.0 magnachip semiconductor ltd . 4 mbq40t65fesc 650v field stop igbt
sep. 20 15 revision 0.0 magnachip semiconductor ltd . 5 mbq40t65fesc 650v field stop igbt
sep. 20 15 revision 0.0 magnachip semiconductor ltd . 6 mbq40t65fesc 650v field stop igbt
sep. 20 15 revision 0.0 magnachip semiconductor ltd . 7 mbq40t65fesc 650v field stop igbt e d q l l1 e b b2 b1 a a1 c d1 e1 p s a2 e2 physical dimension to - 247 d imensions are in millimeters, unless otherwise specified dimension min(mm) max(mm) a 4.70 5.31 a1 2.20 2.60 a2 1.50 2.49 b 0.99 1.40 b1 2.59 3.43 b2 1.65 2.39 c 0.38 0.89 d 20.30 21.46 d1 13.08 - e 15.45 16.26 e1 13.06 14.02 e2 4.32 5.49 e 5.45bsc l 19.81 20.57 l1 - 4.50 p 3.50 3.70 q 5.38 6.20 s 6.15bsc
sep. 20 15 revision 0.0 magnachip semiconductor ltd . 8 mbq40t65fesc 650v field stop igbt disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircra ft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and inde mnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consid er responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registere d trademark of magnachip semiconductor ltd.
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